![]() The following phenomenon occurs inside the transistor: Let us assume that the base-emitter junction is forward-biased and the base-collector junction is reverse-biased. ![]() This turns on the transistor and which in turn allows current flow from the collector to the emitter (Assuming that the transistor is NPN type). When the required voltage is applied to the base, a certain amount of current flows into the base ( I B). The collector covers the larger portion of the BJT and surrounds the base and the emitter. It consists of highly doped N type emitter which is surrounded by a P-type lightly doped base. The structure of NPN bipolar junction transistor is shown in the figure. ![]() This allows a large amount of current to flow in the circuit, therefore resulting in faster operation. The N-P-N bipolar junction transistor will only work when the electrons flow from a region of low electron junction to an area of high electron junction.Īn NPN transistor is considered to be in its ON state when the minority carriers in the P-type region allows the electrons to flow between the collector and emitter terminals of the transistor. When there is no current flowing in the transistor this is because the p-type silicon semiconductor does not have enough electrons which act as a barrier for the conduction of current to take place. When the current flows out of the emitter terminal and exits the transistor the sign of the current is negative.Ī bipolar junction transistor is that it works as an electron valve. According to the sign convention, it can be observed that when the current flows into all the terminals the sign of the current is positive. I E, I B and I C are the emitter and collector current and V EB and V CB are the emitter-base and collector base voltages.
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